Inductor component

ABSTRACT

The inductor component includes a first magnetic layer, an inductor wiring line laminated on a main face of the first magnetic layer, a second magnetic layer disposed in the same layer as the inductor wiring line, a third magnetic layer disposed on a main face of the inductor wiring line and the second magnetic layer on a side opposite to the first magnetic layer, and an insulation layer being a non-magnetic material in contact with part of a surface of the inductor wiring line. The entire face of the surface of the inductor wiring line on the first magnetic layer side is in contact with the first magnetic layer, and a face of the surface of the inductor wiring line on the second magnetic layer side is in contact with the insulation layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims benefit of priority to Japanese PatentApplication No. 2020-030656, filed Feb. 26, 2020, the entire content ofwhich is incorporated herein by reference.

BACKGROUND Technical Field

The present disclosure relates to an inductor component.

Background Art

An inductor wiring line is laminated on a surface of an insulationsubstrate in an inductor component described in Japanese UnexaminedPatent Application Publication No. 2013-225718. The face of the inductorwiring line not covered by the insulation substrate is covered by aninsulation layer. The outer face of the laminated structure constitutedof the inductor wiring line, the insulation substrate, and theinsulation layer is covered by a magnetic layer.

SUMMARY

In the inductor component described in Japanese Unexamined PatentApplication Publication No. 2013-225718, the proportion of the magneticlayer may be made larger as the proportion of the insulation substrateor the insulation layer is smaller when the overall volume of theinductor component is the same. This is advantageous in terms ofimproving the inductance. On the other hand, omitting all of theinsulation substrate and the insulation layer may not ensure thedemanded insulation property, and is not practical.

Accordingly, one aspect of the present disclosure is an inductorcomponent including a first magnetic layer; an inductor wiring linelaminated on a main face of the first magnetic layer; a second magneticlayer disposed in a layer same as the inductor wiring line; a thirdmagnetic layer disposed on a main face of the inductor wiring line andthe second magnetic layer on a side opposite to the first magneticlayer; and an insulation layer being a non-magnetic material in contactwith part of a surface of the inductor wiring line, in which an entireface of the surface of the inductor wiring line on a side of the firstmagnetic layer is in contact with the first magnetic layer, and a faceof the surface of the inductor wiring line on the second magnetic layerside is in contact with the insulation layer.

According to the configuration described above, the entire face of thesurface of the inductor wiring line on the first magnetic layer side isin contact with the first magnetic layer without the insulation layerinterposed therebetween. Absence of the insulation layer on the firstmagnetic layer side relative to the inductor wiring line allows theproportion of the insulation layer in the inductor component to berelatively small. Further, interposing the insulation layer in the samelayer as the inductor wiring line makes it easy to ensure the insulationproperty in the same layer with the inductor wiring line. Note that thesurface of the inductor wiring line refers to an outer face being aboundary with the outer side portion of the inductor wiring line.

Other features, elements, characteristics and advantages of the presentdisclosure will become more apparent from the following detaileddescription of preferred embodiments of the present disclosure withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an exploded perspective view of an inductor component in afirst embodiment;

FIG. 2 is a top view of a second layer in the first embodiment;

FIG. 3 is a sectional view of the inductor component in the firstembodiment taken along a line A-A in FIG. 2;

FIG. 4 is an enlarged sectional view of a contacting portion between aninductor wiring line and a magnetic layer in the first embodiment;

FIG. 5 is an explanatory diagram of a manufacturing method of theinductor component in the first embodiment;

FIG. 6 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 7 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 8 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 9 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 10 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 11 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 12 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 13 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 14 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 15 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 16 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 17 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 18 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 19 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 20 is an explanatory diagram of the manufacturing method of theinductor component in the first embodiment;

FIG. 21 is an exploded perspective view of an inductor component in asecond embodiment;

FIG. 22 is a top view of a second layer in the second embodiment;

FIG. 23 is a sectional view of the inductor component in the secondembodiment taken along a line B-B in FIG. 22;

FIG. 24 is an enlarged sectional view of the inductor component in thesecond embodiment;

FIG. 25 is an explanatory diagram of a manufacturing method of theinductor component in the second embodiment;

FIG. 26 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 27 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 28 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 29 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 30 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 31 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 32 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 33 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 34 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 35 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 36 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 37 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 38 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 39 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 40 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment;

FIG. 41 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment; and

FIG. 42 is an explanatory diagram of the manufacturing method of theinductor component in the second embodiment.

DETAILED DESCRIPTION

Hereinafter, an inductor component and an embodiment of the inductorcomponent will be described. Note that constituent elements may beillustrated in an enlarged manner in order to facilitate understandingof the drawings. The dimensional ratio of the constituent element maydiffer from the actual dimensional ratio or that in another drawing.

First Embodiment

Hereinafter, a first embodiment of the inductor component will bedescribed.

An inductor component 10 has, as a whole, a structure in which threethin plate-shape layers are laminated in a thickness direction asillustrated in FIG. 1. In the following description, a laminationdirection of each of three layers will be described as an up-downdirection.

A first layer L1 has a substantially square shape when viewed in theup-down direction. The first layer L1 is constituted of only a firstmagnetic layer 21. The first magnetic layer 21 is a mixture of a resinand a magnetic metal powder, and is a magnetic body as a whole. Magneticmetal powders 20B are dispersed in a base material 20A made of aninsulation material in the first magnetic layer 21 as illustrated inFIG. 4. The first magnetic layer 21, therefore, is a magnetic materialas a whole. The base material 20A is composed of an epoxy-based resinand an inorganic filler having an average particle size equal to or lessthan about 1.0 μm. Further, the magnetic metal powder 20B is an alloymade of iron, silicon, and chromium, and the average particle size ofthe magnetic metal powder 20B is equal to or less than about 5.0 μm. Inthe present embodiment, the first layer L1 is the lowermost layer in theup-down direction. That is, in the up-down direction, the side on whichan outer electrode 70 is provided is referred to as an upper side, andthe opposite side thereof is referred to as a lower side. The outerelectrode 70 will be described later.

A second layer L2 having the substantially square shape same as thefirst layer L1 when viewed in the up-down direction is laminated on theupper side face of the first layer L1 in the lamination direction asillustrated in FIG. 1. In the embodiment, the face of the second layerL2 contacting with the first layer L1 is a main face MF of the secondlayer L2. The second layer L2 is constituted of an inductor wiring line30, a first dummy wiring line 41, a second dummy wiring line 42, asecond magnetic layer 22, and a first insulation portion 81. That is,the inductor wiring line 30 constituting part of the second layer L2 islaminated on a main face of the first magnetic layer 21 constituting thefirst layer L1.

The inductor wiring line 30 is constituted of a wiring line main body31, a first pad 32, and a second pad 33 in the second layer L2 asillustrated in FIG. 2. The inductor wiring line 30 extends in a spiralshape around the center of a substantially square shape in the secondlayer L2 when viewed from the upper side in the up-down direction.Specifically, when viewed from the upper side in the up-down direction,the wiring line main body 31 of the inductor wiring line 30 is spirallywound in a counterclockwise direction from an outer peripheral endportion 31A in the outer side portion in a radial direction toward aninner peripheral end portion 31B in the inner side portion in the radialdirection.

The number of turns of the inductor wiring line 30 is determined basedon a virtual vector. The starting point of the virtual vector is placedon a virtual center line extending along the extending direction of theinductor wiring line 30 through the center of the wiring line width ofthe inductor wiring line 30. The direction of the virtual vector rotatesin a normal direction view when the starting point of the inductorwiring line 30 is moved from one end to the other end of the virtualcenter line. The number of turns of the inductor wiring line 30 isdefined as about 1.0 turns when the direction of the virtual vectorrotates about 360 degrees. Thus, when the inductor wiring line 30 iswound about 180 degrees, the number of turns is about 0.5 turns, forexample. The direction of the virtual vector virtually placed on theinductor wiring line rotates about 540 degrees in the embodiment. Withthis, the number of turns of the wound inductor wiring line 30 is about1.5 turns in the embodiment.

The first pad 32 is connected to the outer peripheral end portion 31A ofthe wiring line main body 31. The first pad 32 has a substantiallycircular shape when viewed in the up-down direction. The diameter of thecircle of the first pad 32 is larger than the wiring line width of thewiring line main body 31.

The first dummy wiring line 41 extends from the first pad 32 toward theouter edge side of the second layer L2. The first dummy wiring line 41extends to the side face of the second layer L2, and is exposed to theouter face of the inductor component 10.

The second pad 33 is connected to the inner peripheral end portion 31Bof the wiring line main body 31. The second pad 33 has a substantiallycircular shape when viewed in the up-down direction. The diameter of thecircle of the second pad 33 is larger than the wiring line width of thewiring line main body 31.

The second dummy wiring line 42 extends from a portion wound by 0.5turns from the outer peripheral end portion 31A in a region between theouter peripheral end portion 31A and the inner peripheral end portion31B of the wiring line main body 31. The second dummy wiring line 42extends to the side face of the second layer L2, and is exposed to theouter face of the inductor component 10. The inductor wiring line 30,the first dummy wiring line 41, and the second dummy wiring line 42 areintegrated with one another in the embodiment.

The inductor wiring line 30 has a laminated structure including acatalyst layer 30A, a first wiring line layer 30B, and a second wiringline layer 30C in order from the side of the first magnetic layer 21constituting the first layer L1 as illustrated in FIG. 4. The catalystlayer 30A of the inductor wiring line 30 is in contact with the upperface of the first magnetic layer 21, and constitutes a main face MF ofthe second layer L2. The material of the catalyst layer 30A ispalladium. Only the inductor wiring line 30 and the first magnetic layer21 that is described above are illustrated in FIG. 4, and otherconstituent elements are not illustrated.

The first wiring line layer 30B is directly laminated on the upper faceof the catalyst layer 30A. The material of the first wiring line layer30B has a copper ratio equal to or less than about 99 wt % and a nickelratio equal to or larger than about 0.1 wt %. A thickness TB of thefirst wiring line layer 30B is equal to or less than about one-tenth ofthe wiring line width of the inductor wiring line 30. The thickness TBof the first wiring line layer 30B is about 2.0 μm in the embodiment.The thickness TB of the first wiring line layer 30B is determined asfollows. The thickness from the upper end of the first magnetic layer 21to the upper end of the first wiring line layer 30B is measured at threepoints in a cross section along the lamination direction in oneobservation field under a microscope of 1500 times magnification. Thethickness TB of the first wiring line layer 30B is determined as theaverage value of the three measured values. The thickness TB of thefirst wiring line layer 30B is substantially constant in the embodiment.Note that the thickness of the catalyst layer 30A described above isexaggerated in FIG. 4, but is much smaller than the thickness of thefirst wiring line layer 30B. Thus, in measuring the thickness TB of thefirst wiring line layer 30B, measuring the thickness from the upper endof the first magnetic layer 21, that is, including the thickness of thecatalyst layer 30A, does not affect the measurement. However, when theinterface of the catalyst layer 30A is clearly confirmed, the thicknessTB may be measured from the upper face of the catalyst layer 30A. Thewiring line width of the inductor wiring line 30 is determined as theaverage value of three points of the width dimension of the inductorwiring line 30 in the vicinity of the center in the extending direction.

The second wiring line layer 30C is directly laminated on the upper faceof the first wiring line layer 30B being the surface on a third magneticlayer 23 side. A thickness TC of the second wiring line layer 30C isequal to or about five times larger than the thickness TB of the firstwiring line layer 30B. The second wiring line layer 30C has thethickness TC of about 45 μm in the embodiment. An overall thickness TAof the inductor wiring line 30 is a total value of the thickness TB ofthe first wiring line layer 30B and the thickness TC of the secondwiring line layer 30C as illustrated in FIG. 3, and is about 47 μm. Thematerial of the second wiring line layer 30C has a copper ratio equal toor larger than about 99 wt %, and the nickel ratio is equal to or lessthan the detection limit.

An anchor portion 34 extends from the main face MF of the inductorwiring line 30 as illustrated in FIG. 4. The anchor portion 34 coversthe surfaces of the magnetic metal powders 20B in contact with the mainface MF among the large number of magnetic metal powders 20B in thefirst magnetic layer 21. The anchor portion 34 extends from the mainface MF so as to enter a gap between the base material 20A and themagnetic metal powder 20B in the first magnetic layer 21. Further, themagnetic metal powder 20B covered by the anchor portion 34 includes across section in which equal to or more than about one-third of thesurface is covered by the anchor portion 34 when the magnetic metalpowder 20B is viewed in a cross section. The cross section is orthogonalto the main face MF in the embodiment.

In the inductor wiring line 30 of the second layer L2, a 0.5 turnsportion on the first pad 32 side and a 0.5 turns portion on the secondpad 33 side extend in parallel to each other as illustrated in FIG. 1.The distance between the wiring lines in the inductor wiring line 30 isminimum between the inner side face of the 0.5 turns portion in theradial direction on the first pad 32 side and the outer side face of the0.5 turns portion in the radial direction on the second pad 33 side.Further, in the second layer L2, a first insulation portion 81 isinterposed between the inner side face of the 0.5 turns portion in theradial direction on the first pad 32 side and the outer side face of the0.5 turns portion in the radial direction on the second pad 33 side.That is, the first insulation portion 81 is interposed in the portionwhere the distance between the wiring lines in the inductor wiring line30 is minimum, and extends in a substantially arc shape along theinductor wiring line 30. The first insulation portion 81 is composed ofan epoxy-based resin and an inorganic filler having an average particlesize equal to or less than about 1.0 μm.

In the second layer L2, the portion other than the inductor wiring line30, the first dummy wiring line 41, the second dummy wiring line 42, andthe first insulation portion 81 is the second magnetic layer 22.Accordingly, the second magnetic layer 22 is present in the centralportion of the second layer L2 and in the portion of the second layer L2on the outer side relative to the inductor wiring line 30. Therefore, aface of the surface of the inductor wiring line 30 on the side oppositeto the first insulation portion 81 is in contact with the secondmagnetic layer 22. In addition, the material of the second magneticlayer 22 is the same as that of the first magnetic layer 21. Asdescribed above, the second magnetic layer 22 is disposed in the samelayer as the inductor wiring line 30.

A third layer L3 having the substantially square shape same as thesecond layer L2 when viewed in the up-down direction is laminated on theupper face of the second layer L2. The third layer L3 is constituted ofa first vertical wiring line 51, a second vertical wiring line 52, thethird magnetic layer 23, and a second insulation portion 82. The firstvertical wiring line 51 and the second vertical wiring line 52 areconnected to the inductor wiring line 30, and penetrate through thethird magnetic layer 23 from the main face on the inductor wiring line30 side toward the main face on the side opposite to the inductor wiringline 30 side.

The first vertical wiring line 51 is directly connected to the upperside face of the first pad 32 without any other layers interposedtherebetween. The first vertical wiring line 51 has a substantiallycolumnar shape, and an axis line direction of the column coincides withthe up-down direction. The diameter of the substantially circular firstvertical wiring line 51 is smaller than the diameter of the first pad 32when viewed in the up-down direction. The material of the first verticalwiring line 51 is the same as that of the second wiring line layer 30Cof the inductor wiring line 30.

The second vertical wiring line 52 is directly connected to the upperside face of the second pad 33 without any other layers interposedtherebetween. The second vertical wiring line 52 has a substantiallycolumnar shape, and an axis line direction of the column coincides withthe up-down direction. The diameter of the substantially circular secondvertical wiring line 52 is smaller than the diameter of the second pad33 when viewed in the up-down direction. The material of the secondvertical wiring line 52 is the same as that of the second wiring linelayer 30C of the inductor wiring line 30. Note that the second wiringline layer 30C of the inductor wiring line 30, the first dummy wiringline 41, the second dummy wiring line 42, the first vertical wiring line51, and the second vertical wiring line 52 are integrated with oneanother. The first vertical wiring line 51 and the second verticalwiring line 52 are virtually illustrated by a dashed-and-double-dottedline in FIG. 2.

The second insulation portion 82 is directly connected to the upper sideface of the first insulation portion 81 without any other layersinterposed therebetween as illustrated in FIG. 1. The second insulationportion 82 covers a wider range than the first insulation portion 81 inthe width direction orthogonal to the extending direction of the firstinsulation portion 81. As a result, the second insulation portion 82covers part of the upper face of the 0.5 turns portion on the first pad32 side and part of the upper face of the 0.5 turns portion on thesecond pad 33 side in the inductor wiring line 30. The thickness of thesecond insulation portion 82 is smaller than the thickness of the thirdlayer L3, and the third magnetic layer 23 is laminated on the upper sideof the second insulation portion 82 in the third layer L3. The secondinsulation portion 82 is composed of epoxy-based resin and an inorganicfiller having an average particle size equal to or less than about 1.0μm, similarly to the first insulation portion 81. Note that aninsulation layer 80 is constituted of the first insulation portion 81and the second insulation portion 82 in the embodiment. The secondinsulation portion 82 is virtually illustrated by adashed-and-double-dotted line in FIG. 2.

In the third layer L3, the portion other than the second insulationportion 82, the first vertical wiring line 51, and the second verticalwiring line 52 is the third magnetic layer 23 as illustrated in FIG. 1.The third magnetic layer 23, therefore, is laminated on an upper sidemain face of the inductor wiring line 30 and the second magnetic layer22 in the lamination direction on the side opposite to the firstmagnetic layer 21.

A covering layer 60 made of an insulation material is laminated on anupper side main face of the surface of the third layer L3 on the sideopposite to the inductor wiring line 30 as illustrated in FIG. 3. Thecovering layer 60 covers substantially the entire area of the upper sideface of the third layer L3, but holes are formed in portionscorresponding to the first vertical wiring line 51 and the secondvertical wiring line 52 in the third layer L3. That is, the upper sideface of the first vertical wiring line 51 and the second vertical wiringline 52 on the side opposite to the inductor wiring line 30 is notcovered by the covering layer 60.

An outer electrode 70 is connected to an upper side face of the firstvertical wiring line 51. The outer electrode 70 seems as if it ispenetrating through the covering layer 60, and the upper face of theouter electrode 70 is exposed from the covering layer 60. The outerelectrode 70 has a three-layer structure, and is constituted of a copperlayer 70A, a nickel layer 70B, and a gold layer 70C in order from thelower side in the lamination direction. In addition, the outer electrode70 is also connected to the upper side face of the second verticalwiring line 52. Note that the covering layer 60 and the outer electrode70 are not illustrated in FIG. 1.

Next, a manufacturing method of the inductor component 10 in the firstembodiment will be described.

The manufacturing method of the inductor component 10 includes a firstmagnetic layer processing step, a first covering step, an inductorwiring line processing step, a first resist layer removing step, aninsulation layer processing step, a second covering step, a verticalwiring line processing step, a second resist layer removing step, asecond magnetic layer processing step, a covering layer processing step,a base substrate removing step, an outer electrode processing step and adividing step as illustrated in FIG. 5.

In manufacturing the inductor component 10, first, the first magneticlayer processing step is performed. A base substrate with a copper foil95 is prepared as illustrated in FIG. 6. A base substrate 96 of the basesubstrate with the copper foil 95 has a plate-shape. A copper foil 97 islaminated on the upper side face of the base substrate 96 in thelamination direction. Then, the first magnetic layer 21 composed of thebase material 20A and the magnetic metal powder 20B is formed on theupper side face of the copper foil 97 of the base substrate with copperfoil 95 as illustrated in FIG. 7. In forming the first magnetic layer21, an insulation resin containing the magnetic metal powder 20B isapplied, and the insulation resin is solidified by press working toobtain the base material 20A. The upper portions of the base material20A and the magnetic metal powder 20B are ground such that the thicknessin the up-down direction of the first magnetic layer 21 becomes adesired thickness. It is preferable to form a slight gap at theinterface between the base material 20A and the magnetic metal powder20B by controlling process parameters during the grinding. For example,vibrating the magnetic metal powder 20B exposed from the base material20A by the grinding tool may form a slight gap between the base material20A and the magnetic metal powder 20B. More specifically, the grindingtool is in contact with the base material 20A and the magnetic metalpowder 20B to grind the upper portions of the base material 20A and themagnetic metal powder 20B, and an appropriate vibration of the grindingtool causes the vibration of the magnetic metal powder 20B to be largerbecause the magnetic metal powder 20B is harder than the base material20A made of an insulation resin. As described above, a slight gap isformed by the difference in vibration between the base material 20A andthe magnetic metal powder 20B.

The first covering step is performed next to the first magnetic layerprocessing step. In the first covering step, a first resist layer 91covering the portion of the upper side face of the first magnetic layer21, on which the inductor wiring line 30, the first dummy wiring line41, and the second dummy wiring line 42 are not formed, is patterned byphotolithography as illustrated in FIG. 8. Specifically, first, aphotosensitive dry film resist is applied to the entire upper side faceof the first magnetic layer 21. Next, the portion of the upper side faceof the first magnetic layer 21, on which the inductor wiring line 30,the first dummy wiring line 41, and the second dummy wiring line 42 arenot formed, is exposed to light. As a result, of the applied dry filmresist, the portion exposed to light is cured. Thereafter, the uncuredportion of the applied dry film resist is peeled and removed by achemical solution. Thus, the cured portion of the applied dry filmresist is formed as the first resist layer 91. On the other hand, thefirst magnetic layer 21 is exposed in the portion where the applied dryfilm resist is removed by a chemical solution and is not covered by thefirst resist layer 91.

An inductor wiring line processing step is performed next to the firstcovering step. In the inductor wiring line processing step, the inductorwiring line 30 constituted of the catalyst layer 30A, the first wiringline layer 30B, and the second wiring line layer 30C is formed on theupper side face of the first magnetic layer 21. Specifically, first, aportion which is not covered by the first resist layer 91 is made toadsorb palladium as illustrated in FIG. 9 in the upper side face of thefirst magnetic layer 21. With this, the palladium adsorbed on the upperside face of the first magnetic layer 21 is formed as the catalyst layer30A. Next, the electroless copper plating by performing the immersion inan electroless copper plating solution forms the first wiring line layer30B having a copper ratio equal to or less than about 99 wt % and anickel ratio equal to or larger than about 0.1 wt % on the upper sideface of the catalyst layer 30A. The electroless copper plating solutionis an alkaline solution, and contains copper salts such as copperchloride, copper sulfate and the like. On the other hand, the materialof the magnetic metal powder 20B is iron, and the ionization tendency islarger than that of copper being the material of the first wiring linelayer 30B. Therefore, in the inductor wiring line processing step, ironon the surface of the magnetic metal powder 20B dissolves, and instead,copper is deposited on the surface of the magnetic metal powder 20B.

Here, since the electroless copper plating solution enters a slight gapbetween the base material 20A and the magnetic metal powder 20B, thesubstitution of iron with copper occurs not only on the exposed faceside of the magnetic metal powder 20B but also on the surface of themagnetic metal powder 20B on the inner side of the base material 20A.Copper deposited on the surface of the magnetic metal powder 20B on theinner side of the base material 20A functions as the anchor portion 34.

The covering amount is controlled such that copper deposited on thesurface of the magnetic metal powder 20B on the inner side of the basematerial 20A covers equal to or more than about one-third of the surfacearea of the magnetic metal powder 20B. Specifically, the covering amountis controlled by such as the application duration of a voltage for theelectroless copper plating, the amount of the electric current, thecontent of copper or the catalyst in the plating solution or the like.

An electrolytic copper plating is performed next to the electrolesscopper plating as illustrated in FIG. 10. With this, the second wiringline layer 30C having a copper ratio equal to or larger than about 99 wt% is formed on the surface of the first wiring line layer 30B. Asdescribed above, the inductor wiring line 30 is formed by the adsorptionof palladium, the electroless copper plating, and the electrolyticcopper plating.

The first resist layer removing step for removing the first resist layer91 is performed next to the inductor wiring line processing step. In thefirst resist layer removing step, the first resist layer 91 is peeledoff to remove from the first magnetic layer 21 as illustrated in FIG.11.

The insulation layer processing step is performed next to the firstresist layer removing step. In the insulation layer processing step,first, the insulation resin is applied to the upper side faces of thefirst magnetic layer 21, the inductor wiring line 30, the first dummywiring line 41, and the second dummy wiring line 42 as illustrated inFIG. 12.

Next, a portion for forming the first insulation portion 81 and thesecond insulation portion 82 is exposed to light as illustrated in FIG.13. As a result, the portion exposed to light is cured. Thereafter, theuncured portion of the insulation resin is peeled and removed by achemical solution. Thus, the cured portion of the applied insulationresin is formed as the insulation layer 80.

The second covering step is performed next to the insulation layerprocessing step. In the second covering step, patterned is a secondresist layer 92 covering a portion of the upper side face of the firstmagnetic layer 21 and the upper side face of the second wiring linelayer 30C, on which the first vertical wiring line 51 and the secondvertical wiring line 52 are not formed as illustrated in FIG. 14. Notethat the aspect of the photolithography in the second covering step isthe same as that in the first covering step and a detailed descriptionthereof will be omitted.

The vertical wiring line processing step for forming the first verticalwiring line 51 and the second vertical wiring line 52 is performed nextto the second covering step. In the vertical wiring line processingstep, electrolytic copper plating is performed, and the first verticalwiring line 51 and the second vertical wiring line 52 are formed in aportion which is not covered by the second resist layer 92 of the upperside face of the second wiring line layer 30C. The first vertical wiringline 51 and the second vertical wiring line 52 have the copper ratioequal to or larger than about 99 wt %.

The second resist layer removing step for removing the second resistlayer 92 is performed next to the vertical wiring line processing stepas illustrated in FIG. 15. In the second resist layer removing step, thesecond resist layer 92 is peeled off to remove from the first magneticlayer 21 similarly to the first resist layer removing step.

The second magnetic layer processing step is performed next to thesecond resist layer removing step. In the second magnetic layerprocessing step, first, a magnetic material is filled from the upperside face of the first magnetic layer 21 toward the upper side relativeto the upper ends of the first vertical wiring line 51 and the secondvertical wiring line 52 in the lamination direction as illustrated inFIG. 16. Next, the second magnetic layer 22 and the third magnetic layer23 are formed by grinding the magnetic material from the upper side inthe lamination direction until the upper ends of the first verticalwiring line 51 and the second vertical wiring line 52 are exposed.

The covering layer processing step is performed next to the secondmagnetic layer processing step. In the covering layer processing step, asolder resist functioning as the covering layer 60 is patterned byphotolithography on the portion on which the outer electrode 70 is notformed among the portions of the upper side face of the third magneticlayer 23, the upper side face of the first vertical wiring line 51, andthe upper side face of the second vertical wiring line 52, asillustrated in FIG. 17.

The base substrate removing step is performed next to the covering layerprocessing step. In the base substrate removing step, the base substratewith the copper foil 95 is removed as illustrated in FIG. 18.Specifically, the base substrate 96 is peeled off to remove from thefirst magnetic layer 21. Next, the copper foil 97 is removed by etching.Then, the first magnetic layer 21 is ground from the lower side in thelamination direction until the thickness from the lower end of the firstmagnetic layer 21 to the upper end of the covering layer 60 reaches adesired value.

The outer electrode processing step is performed next to the basesubstrate removing step. The outer electrode 70 is formed on the upperside face of the first vertical wiring line 51 as illustrated in FIG.19. Further, the outer electrode 70 is formed on the upper side face ofthe second vertical wiring line 52. In the outer electrode 70, thecopper layer 70A, the nickel layer 70B, and the gold layer 70C areformed by electroless plating for copper, nickel, and gold,respectively. Thus, the outer electrode 70 having a three-layerstructure is formed.

The dividing step is performed next to the outer electrode processingstep. Specifically, the dividing is performed by cutting with a dicingmachine at break lines DL as illustrated in FIG. 20. Thus, the inductorcomponent 10 may be obtained. In addition, at this time, the first dummywiring line 41 and the second dummy wiring line 42 included in the breaklines DL are exposed to the side faces of the inductor component 10.

Next, effects of the first embodiment will be described.

(1) According to the inductor component 10 in the first embodiment, inthe second layer L2 in which the inductor wiring line 30 is disposed,the insulation layer 80 is disposed on part of the side face of theinductor wiring line 30. Therefore, the insulation property between thewiring lines in the inductor wiring line 30 may be ensured. On the otherhand, the face of the surface of the inductor wiring line 30 on thefirst magnetic layer 21 side is not covered by the insulation layer 80,and is in contact with the first magnetic layer 21. The proportion ofthe insulation layer 80 in the inductor component 10 may be reduced andthe proportion of the first magnetic layer 21 in the inductor component10 may be increased because the insulation layer 80 does not exist onthe face on the first magnetic layer 21 side. Therefore, when the volumeof the inductor component 10 is the same, it is advantageous in terms ofinductance because the proportion of the first magnetic layer 21 islarge.

(2) According to the inductor component 10 in the first embodiment, thenumber of turns of the inductor wiring line 30 is about 1.5 turns. Sincethe number of turns of the inductor wiring line 30 is more than about1.0 turns, there is an area in which the wiring lines in the inductorwiring line 30 become close to each other in some extent. According tothe first embodiment described above, the insulation layer 80 isinterposed between the wiring lines in the inductor wiring line 30 wherethe distance between the wiring lines in the inductor wiring line 30 isthe smallest. Therefore, it is possible to ensure the insulationproperty at a portion where the wiring lines in the inductor wiring line30 are likely to be short-circuited.

(3) According to the inductor component 10 in the first embodiment, partof the face of the inductor wiring line 30 on the third magnetic layer23 side is covered by the insulation layer 80. Therefore, the insulationproperty with the side of the third magnetic layer 23 on which the outerelectrode 70 is disposed may easily be ensured.

(4) According to the inductor component 10 in the first embodiment, thethickness TC of the second wiring line layer 30C is equal to or largerthan about five times the thickness TB of the first wiring line layer30B. Therefore, the thickness TA of the inductor wiring line 30 may beincreased to some extent and a DC resistance may be reduced.

(5) According to the manufacturing method of the inductor component 10in the first embodiment, the electrolytic copper plating is performed,and the second wiring line layer 30C is formed on the surface of thefirst wiring line layer 30B. The second wiring line layer 30C has thecopper ratio equal to or larger than about 99 wt % and the nickel ratioequal to or less than the detection limit. Therefore, the second wiringline layer 30C having a large thickness may be efficiently formedcompared with the electroless copper plating.

(6) According to the inductor component 10 in the first embodiment, thecatalyst layer 30A is disposed on the first magnetic layer 21 side ofthe first wiring line layer 30B. The catalyst layer 30A activates thedeposition of copper in the electroless copper plating. Therefore, sincepalladium as the catalyst is adsorbed in a layered manner on the entiresurface of the first magnetic layer 21, copper is deposited on theentire surface of the first magnetic layer 21 when the electrolesscopper plating is performed. This makes it easy to form the first wiringline layer 30B having a uniform thickness.

(7) According to the inductor component 10 in the first embodiment, thecovering layer 60 covers the upper face of the third layer L3.Therefore, the insulation property with the external factors may easilybe ensured.

(8) According to the inductor component 10 in the first embodiment, theinsulation layer 80 contains epoxy-based resin and an inorganic filler.Therefore, a physical defect such as a crack is unlikely to occur whenthe thickness of the first magnetic layer 21 is reduced to some extent,and sufficient strength may be maintained without an additive insulationsubstrate or the like.

(9) According to the inductor component 10 in the first embodiment, theanchor portion 34 extends from the lower side face of the catalyst layer30A constituting the main face MF of the inductor wiring line 30. Theanchor portion 34 covers the surfaces of the magnetic metal powders 20Bdispersed in the base material 20A of the first magnetic layer 21.Therefore, an anchor effect is obtained between the inductor wiring line30 and the first magnetic layer 21 by the anchor portion 34. As aresult, adhesion between the inductor wiring line 30 and the firstmagnetic layer 21 is improved. Thus, in the inductor component 10, it isachieved that the inductor wiring line 30 is directly laminated on thefirst magnetic layer 21 while ensuring the required adhesion between theinductor wiring line 30 and the first magnetic layer 21.

(10) According to the inductor component 10 in the first embodiment, themagnetic metal powder 20B covered by the anchor portion 34 includes across section in which equal to or more than about one-third of thesurface is covered by the anchor portion 34 when the magnetic metalpowder 20B is viewed in a cross section. Therefore, the relatively largeanchor portion 34 allows reliable close contact between the inductorwiring line 30 and the first magnetic layer 21.

(11) According to the manufacturing method of the inductor component 10in the first embodiment, the magnetic metal powder 20B is exposed onpart of the surface of the first magnetic layer 21 in the inductorwiring line processing step, and the inductor wiring line 30 is formedon part of the surface of the first magnetic layer 21 by immersing thefirst magnetic layer 21 in a plating solution. Therefore, the platingliquid enters the gap between the base material 20A and the magneticmetal powder 20B in the first magnetic layer 21, and the anchor portion34 may be formed on the surface of the magnetic metal powder 20B on theinner side of the base material 20A.

(12) According to the manufacturing method of the inductor component 10in the first embodiment, the electroless copper plating is performed byperforming immersion in the electroless copper plating solution, and thefirst wiring line layer 30B having a copper ratio equal to or less thanabout 99 wt % and a nickel ratio equal to or larger than about 0.1 wt %is formed on the upper side face of the catalyst layer 30A. Therefore,damage to the surface of the first magnetic layer 21, in a case wherethe first wiring line layer 30B is formed by such as sputtering forexample, is made relatively small, and the first wiring line layer 30Bmay be formed without excessively reducing the amount of the magneticmetal powder 20B in the first magnetic layer 21.

(13) According to the inductor component 10 in the first embodiment,iron being a material of the magnetic metal powder 20B has a higherionization tendency than copper being the material of the first wiringline layer 30B. Therefore, iron having a large ionization tendencybecomes ions and copper having a small ionization tendency depositsbetween the copper salt in the electroless copper plating and thesurface of the magnetic metal powder 20B. With this, it is possible forcopper to deposit so as to cover the surface of the magnetic metalpowder 20B even when the base material 20A and the magnetic metal powder20B are relatively dense.

Second Embodiment

Hereinafter, a second embodiment of the inductor component will bedescribed.

An inductor component 110 has, as a whole, a structure in which sixplate-shape layers are laminated in a thickness direction as illustratedin FIG. 21. In the following description, the lamination direction inwhich six layers each are laminated will be described as an up-downdirection.

A first layer L11 has a substantially rectangular shape when viewed inthe up-down direction. The first layer L11 is constituted of only afirst magnetic layer 121. Magnetic metal powders 120B are dispersed in abase material 120A made of an insulation material in the first magneticlayer 121 as illustrated in FIG. 24. The first magnetic layer 121,therefore, is a magnetic material as a whole. Specifically, the basematerial 120A is composed of epoxy-based resin and an inorganic fillerhaving an average particle size equal to or less than about 1.0 μm, andthe magnetic metal powder 120B is an alloy made of iron, silicon, andchromium and the average particle size of the magnetic metal powder 120Bis equal to or less than about 5.0 μm. In the embodiment, the firstlayer L11 is the lowermost layer in the up-down direction. That is, inthe up-down direction, the side on which an outer electrode 230 isprovided is referred to as an upper side, and the opposite side thereofis referred to as a lower side. The outer electrode 230 will bedescribed later.

A second layer L12 having the substantially rectangular shape same asthe first layer L11 when viewed in the up-down direction is laminated onthe upper side face of the first layer L11 in the lamination directionas illustrated in FIG. 21. In the embodiment, the face of the secondlayer L12 contacting with the first layer L11 is a main face MF2 of thesecond layer L12. The second layer L12 is constituted of a secondmagnetic layer 122, a first inductor wiring line 130, a first dummywiring line 141, a first connection wiring line 146, and a firstinsulation portion 181. The first inductor wiring line 130 isconstituted of a first wiring line main body 131 having a substantiallyconstant wiring line width, a first pad 132 connected to a first end ofthe first wiring line main body 131, and a second pad 133 connected to asecond end of the first wiring line main body 131. The first inductorwiring line 130, therefore, is laminated on the outer face of the firstmagnetic layer 121.

In the second layer L12, when viewed from the upper side in the up-downdirection, the first wiring line main body 131 of the first inductorwiring line 130 spirally extends around the vicinity of the center ofthe face of the second layer L12 having a substantially rectangularshape on the side opposite to the main face MF2 as illustrated in FIG.22. Specifically, the first wiring line main body 131 of the firstinductor wiring line 130 is spirally wound in a clockwise direction fromthe first end in the outer side portion in the radial direction towardthe second end in the inner side portion in the radial direction.

An angle in which the first inductor wiring line 130 is wound is about540 degrees in the embodiment. With this, the number of turns of thewound first inductor wiring line 130 is about 1.5 turns in theembodiment. In addition, when the second layer L12 is viewed from theupper side in the up-down direction, the side on which the first end ofthe first wiring line main body 131 is disposed is referred to as afirst end side, and the side on which the second end of the first wiringline body 131 is disposed is referred to as a second end side in along-side direction of the second layer L12 having a substantiallyrectangular shape in the embodiment.

The first pad 132 is connected to the first end on one side of theextending direction of the first wiring line main body 131. The firstpad 132 has a substantially rectangular shape when viewed from the upperside in the up-down direction. The first pad 132 constitutes a first endportion of the first inductor wiring line 130. The first pad 132 isdisposed in the vicinity of the corner of the second layer L12 having asubstantially rectangular shape when viewed in the up-down direction.The wiring line width of the first pad 132 is larger than the wiringline width of the first wiring line main body 131 connected to the firstpad 132.

The second pad 133 is connected to the second end on the other side inthe extending direction of the first wiring line main body 131. Thesecond pad 133 has a substantially circular shape when viewed from theupper side in the up-down direction. The second pad 133 constitutes asecond end portion of the first inductor wiring line 130. The diameterof the circle of the second pad 133 is larger than the width of thefirst wiring line main body 131 connected to the second pad 133.

The first dummy wiring line 141 is connected to the first pad 132. Thefirst dummy wiring line 141 extends from the portion of the first pad132 on the side opposite to the first wiring line main body 131 towardthe side face of the second layer L12, and is exposed to the outer faceof the inductor component 110.

In the second layer L12, when viewed from the upper side in the up-downdirection, the first connection wiring line 146 is disposed on the sideopposite to the first pad 132 in a short-side direction of the secondlayer L12 having a substantially rectangular shape and in the vicinityof the corner on the first end side in the long-side direction. Thefirst connection wiring line 146 has the same shape as the first pad 132and the first dummy wiring line 141, and is line-symmetric with thefirst pad 132 and the first dummy wiring line 141. The symmetric axis isa straight line passing through the center of the second layer L12 inthe short-side direction and extending in the long-side direction of thesecond layer L12.

The first inductor wiring line 130 has a laminated structure including afirst wiring line layer 130B and a second wiring line layer 130C inorder from the side of the first magnetic layer 121 constituting thefirst layer L11 as illustrated in FIG. 23. The first wiring line layer130B of the first inductor wiring line 130 is in contact with the upperface of the first magnetic layer 121, and constitutes most of the faceof the first inductor wiring line 130 constituting the main face MF2 ofthe second layer L12.

The material of the first wiring line layer 130B has a copper ratioequal to or less than about 99 wt % and a nickel ratio equal to orlarger than about 0.1 wt %. A thickness TB2 of the first wiring linelayer 130B is equal to or less than about one-tenth of the wiring linewidth of the inductor wiring line 30. The thickness TB2 of the firstwiring line layer 130B is about 2.0 μm in this embodiment. The thicknessTB2 of the first wiring line layer 130B is determined as follows. Thethickness from the upper end of the first magnetic layer 121 to theupper end of the first wiring line layer 130B in a cross section alongthe lamination direction is measured at three points in one observationfield under a microscope of 1500 times magnification. The thickness TB2of the first wiring line layer 130B is determined as the average valueof the three measured values. The thickness TB2 of the first wiring linelayer 130B is substantially constant in the embodiment. Note that thewiring line width of the first inductor wiring line 130 is determined asthe average value of three points of the width dimension of the firstinductor wiring line 130 in the vicinity of the center in the extendingdirection.

The second wiring line layer 130C is laminated on the upper side surfaceof the first wiring line layer 130B on the side opposite to the firstmagnetic layer 121. Further, the second wiring line layer 130C covers anarea slightly wider than the first wiring line layer 130B from the upperside in the lamination direction. That is, the side face of the surfaceof the first wiring line layer 130B facing the direction orthogonal tothe lamination direction is covered by the second wiring line layer130C. Part of the outer face of the second wiring line layer 130Cconstitutes part of the face of the first inductor wiring line 130constituting the main face MF2 of the second layer L12.

A thickness TC2 of the second wiring line layer 130C is equal to orabout five times larger than the thickness TB2 of the first wiring linelayer 130B. The thickness TC2 of the second wiring line layer 130C isabout 45 μm in the embodiment. Thus, the thickness of the first inductorwiring line 130 constituted of the first wiring line layer 130B and thesecond wiring line layer 130C is about 47 μm. The thickness TC of thesecond wiring line layer 130C is determined as follows. The thicknessfrom the upper end of the first wiring line layer 130B to the upper endof the second wiring line layer 130C in a cross section including thelamination direction is measured at three points in one observationfield under a microscope of 1500 times magnification. The thickness TCof the second wiring line layer 130C is determined as the average valueof the three measured values. The material of the second wiring linelayer 130C has a copper ratio equal to or larger than about 99 wt %, andthe nickel ratio is equal to or less than the detection limit.

An anchor portion 134 extends from the main face MF2 of the firstinductor wiring line 130 as illustrated in FIG. 24. The anchor portion134 extends from both of the first wiring line layer 130B and the secondwiring line layer 130C constituting the main face MF2 of the firstinductor wiring line 130 in the embodiment. The anchor portion 134covers the surfaces of the magnetic metal powders 120B in contact withthe main face MF2 among the large number of magnetic metal powders 120Bin the first magnetic layer 121. The anchor portion 134 extends from themain face MF2 so as to enter a gap between the base material 120A andthe magnetic metal powder 120B in the first magnetic layer 121. Further,the magnetic metal powder 120B covered by the anchor portion 134includes a cross section in which equal to or larger than aboutone-third of the surface is covered by the anchor portion 134 when themagnetic metal powder 120B is viewed in a cross section.

In the second layer L12, the side face of the first inductor wiring line130, the side face of the first dummy wiring line 141, and the side faceof the first connection wiring line 146 are covered by the firstinsulation portion 181 as illustrated in FIG. 22. That is, the firstinductor wiring line 130, the first dummy wiring line 141, and the firstconnection wiring line 146 are surrounded by the first insulationportion 181. The first insulation portion 181 is insulation resin withan insulation property, and the insulation performance thereof is higherthan that of the first inductor wiring line 130. Further, the firstinsulation portion 181 contains an inorganic filler. The portion otherthan the first inductor wiring line 130, the first dummy wiring line141, the first connection wiring line 146, and the first insulationportion 181 is the second magnetic layer 122. Therefore, the secondmagnetic layer 122 is disposed in the central portion of the secondlayer L12, the both end portions of the second layer L12 in theshort-side direction, and the first end side portion of the second layerL12 in the long-side direction. The material of the second magneticlayer 122 is the same as that of the first magnetic layer 121. Asdescribed above, since the first layer L11 is constituted of only thefirst magnetic layer 121, the lower face of the first inductor wiringline 130 is in contact with the first magnetic layer 121 without thefirst insulation portion 181 interposed therebetween.

A third layer L13 having the substantially rectangular shape same as thesecond layer L12 when viewed in the up-down direction is laminated onthe upper face of the second layer L12. The third layer L13 isconstituted of a second insulation portion 182, a first via 191, asecond via 192, a third via 193, and a third magnetic layer 123.

The first via 191 is disposed on the upper side of the first pad 132 ofthe second layer L12, and is connected to the first pad 132. The secondvia 192 is disposed on the upper side of the first connection wiringline 146 of the second layer L12, and is connected to the firstconnection wiring line 146. The third via 193 is disposed on the upperside of the second pad 133 of the second layer L12, and is connected tothe second pad 133. The first via 191, the second via 192, and the thirdvia 193 have a substantially columnar shape, and the axial directionthereof coincides with the lamination direction. The length of the firstvia 191, the second via 192, and the third via 193 in the laminationdirection is the same as the thickness of the third layer L13 in thelamination direction. Thus, the first via 191, the second via 192, andthe third via 193 penetrate through the third magnetic layer 123 in thelamination direction.

The second insulation portion 182 covers the first inductor wiring line130, the first dummy wiring line 141, the first connection wiring line146, and the first insulation portion 181 from the upper side. That is,the second insulation portion 182 covers all the face, of the upper faceof the respective wiring lines disposed in the second layer L12, otherthan the portions where the first via 191, the second via 192, and thethird via 193 are disposed. The second insulation portion 182 has ashape to cover an area slightly wider than the outer edges of the firstinductor wiring line 130, the first dummy wiring line 141, and the firstconnection wiring line 146 when viewed from the upper side in theup-down direction. The second insulation portion 182 is insulation resinwith an insulation property similar to the first insulation portion 181,and contains an inorganic filler. Note that a first insulation layer 180is constituted of the first insulation portion 181 and the secondinsulation portion 182 in the embodiment. That is, of the surface of thefirst inductor wiring line 130, the portion of the upper side face inthe lamination direction and of the face on the second magnetic layer122 side excluding the first via 191 and the third via 193 is covered bythe first insulation layer 180, and is in contact with the firstinsulation layer 180 in the embodiment.

In the third layer L13, the portion excluding the first via 191, thesecond via 192, the third via 193, and the second insulation portion 182is the third magnetic layer 123. Therefore, the third magnetic layer 123is disposed in the central portion of the third layer L13, the both endportions of the third layer L13 in the short-side direction, and thefirst end side portion of the third layer L13 in the long-sidedirection. The third magnetic layer 123 is made of the same magneticmaterial as the first magnetic layer 121 described above.

A fourth layer L14 having the substantially rectangular shape same asthe third layer L13 when viewed in the up-down direction is laminated onthe upper face of the third layer L13. The fourth layer L14 isconstituted of a second inductor wiring line 135, a second dummy wiringline 142, a second connection wiring line 147, a third insulationportion 183, and a fourth magnetic layer 124. The second inductor wiringline 135 is constituted of a second wiring line main body 136 having asubstantially constant wiring line width, a third pad 137 connected to afirst end of the second wiring line main body 136, and a fourth pad 138connected to a second end of the second wiring line main body 136. Thatis, the second inductor wiring line 135 is disposed on the upper sidemain face of the third magnetic layer 123 on the side opposite to thefirst inductor wiring line 130, and is laminated on the first inductorwiring line 130 with an interval of the third layer L13 in thelamination direction. Further, the third pad 137 serves as a first endportion of the second inductor wiring line 135, and the fourth pad 138serves as a second end portion of the second inductor wiring line 135 inthe embodiment.

In the fourth layer L14, when viewed from the upper side in the up-downdirection, the second wiring line main body 136 of the second inductorwiring line 135 spirally extends around the vicinity of the center ofthe face of the fourth layer L14 having a substantially rectangularshape on the side opposite to a main face MF3. Specifically, the secondwiring line main body 136 of the second inductor wiring line 135 isspirally wound in the counterclockwise direction from the first end inthe outer side portion in the radial direction toward the second end inthe inner side portion in the radial direction. That is, the windingdirection of the second inductor wiring line 135 is opposite to thewinding direction of the first inductor wiring line 130.

The angle in which the second inductor wiring line 135 is wound is about540 degrees in the embodiment. With this, the number of turns of thewound second inductor wiring line 135 is about 1.5 turns in theembodiment.

The third pad 137 is connected to the first end on one side of theextending direction of the second wiring line main body 136. The thirdpad 137 has a substantially rectangular shape when viewed in the up-downdirection. The third pad 137 constitutes a first end portion of thesecond inductor wiring line 135. The third pad 137 is disposed in thevicinity of the corner of the fourth layer L14 having a substantiallyrectangular shape when viewed in the up-down direction. The third pad137 is wider than the second wiring line main body 136 connected to thethird pad 137 in the wiring line width.

The fourth pad 138 is connected to a second end on the other side in theextending direction of the second wiring line main body 136. The fourthpad 138 has a substantially circular shape when viewed in the up-downdirection. The fourth pad 138 is positioned on the upper side of thesecond pad 133 in the second layer L12, and is connected to the secondpad 133 through the third via 193. The fourth pad 138 is wider than thesecond wiring line main body 136 connected to the fourth pad 138 in thewiring line width. The fourth pad 138 constitutes a second end portionof the second inductor wiring line 135.

The second dummy wiring line 142 is connected to the third pad 137. Thesecond dummy wiring line 142 extends from the portion of the third pad137 on the side opposite to the second wiring line main body 136 towardthe side face of the fourth layer L14, and is exposed to the outer faceof the second inductor wiring line 135.

In the fourth layer L14, when viewed from the upper side in the up-downdirection, the second connection wiring line 147 is disposed on the sideopposite to the third pad 137 in the short-side direction of the fourthlayer L14 having a substantially rectangular shape and in the vicinityof the corner of the first end side in the long-side direction. Thesecond connection wiring line 147 has the same shape as the third pad137 and the second dummy wiring line 142, and is line-symmetric with thethird pad 137 and the second dummy wiring line 142. The symmetric axisis a straight line passing through the center of the fourth layer L14 inthe short-side direction and extending in the long-side direction of thefourth layer L14. The second inductor wiring line 135 and the secondconnection wiring line 147 are illustrated by a broken line in FIG. 22.

The third via 193 is integrated with the second inductor wiring line 135as illustrated in FIG. 23. Although not illustrated in the drawings, thesecond via 192, the second dummy wiring line 142, and the secondinductor wiring line 135 are integrated with one another. Further, thesecond connection wiring line 147 and the first via 191 are integratedwith each other. The integrated object above described will be referredto as a second conductive layer 200 in the following description. Thesecond conductive layer 200 has a laminated structure including a thirdwiring line layer 200A and a fourth wiring line layer 200B. The thirdwiring line layer 200A constitutes part of the lower end side of thesecond conductive layer 200. Therefore, the portion of the third wiringline layer 200A positioned on the lower side of the first via 191 andthe third via 193 is in contact with the first inductor wiring line 130.In addition, the portion of the third wiring line layer 200A positionedon the lower side of the second via 192 is in contact with the firstconnection wiring line 146. Further, the portion of the third wiringline layer 200A positioned on the lower side of other than the first via191, the second via 192, and the third via 193 is in contact with theupper face of the second insulation portion 182. The material of thethird wiring line layer 200A contains titanium and chromium.

The fourth wiring line layer 200B is laminated on the upper side surfaceof the third wiring line layer 200A on the side opposite to the thirdmagnetic layer 123. The material of the fourth wiring line layer 200Bhas a copper ratio equal to or larger than about 99 wt %. The upper endof the fourth wiring line layer 200B is flush with the upper end of thefourth layer L14.

In the fourth layer L14, the gap between the side faces of the secondinductor wiring line 135 is covered by the third insulation portion 183as illustrated in FIG. 21. Therefore, the third insulation portion 183is interposed at the portion where the distance between the wiring linesin the second inductor wiring line 135 is the shortest. The thirdinsulation portion 183 is insulation resin with an insulation property,and the insulation performance thereof is higher than that of the secondinductor wiring line 135. In addition, the third insulation portion 183does not contain an inorganic filler, unlike the first insulation layer180. The shape of the third insulation portion 183 is a curved shape asa whole.

The portion other than the second inductor wiring line 135, the seconddummy wiring line 142, the second connection wiring line 147, and thethird insulation portion 183 is the fourth magnetic layer 124.Therefore, the fourth magnetic layer 124 is disposed in the centralportion of the fourth layer L14, the both end portions of the fourthlayer L14 in the short-side direction, and the first end side portion ofthe fourth layer L14 in the long-side direction. The material of thefourth magnetic layer 124 is the same as that of the first magneticlayer 121.

A fifth layer L15 having the substantially rectangular shape same as thefourth layer L14 when viewed in the up-down direction is laminated onthe upper face of the surface of the fourth layer L14. The fifth layerL15 is constituted of a fifth magnetic layer 125, a fourth insulationportion 184, a first columnar wiring line 194, a second columnar wiringline 195, and a third columnar wiring line 196. The fifth magnetic layer125 is disposed on the upper side of the second inductor wiring line 135and the fourth magnetic layer 124 opposite to the first inductor wiringline 130. The first columnar wiring line 194, the second columnar wiringline 195, and the third columnar wiring line 196 penetrate through thefifth layer L15 in the lamination direction, that is, penetrate throughthe fifth layer L15 from the face on the fourth magnetic layer 124 sidetoward the face on the side opposite to the fourth magnetic layer 124side face. These columnar wiring lines function as vertical wiring linesin the embodiment.

The fourth insulation portion 184 is directly connected to the upperside face of the third insulation portion 183 without any other layersinterposed therebetween. The fourth insulation portion 184 covers awider area than the third insulation portion 183 in the width directionorthogonal to the extending direction of the third insulation portion183. The thickness of the fourth insulation portion 184 is identicalwith the thickness of the fifth layer L15. The fourth insulation portion184 is insulation resin with an insulation property similar to the thirdinsulation portion 183, and the insulation performance thereof is higherthan that of the second inductor wiring line 135. Note that the secondinsulation layer 185 is constituted of the third insulation portion 183and the fourth insulation portion 184 in the embodiment. The secondinsulation layer 185 is a non-magnetic material in contact with part ofthe surface of the second inductor wiring line 135. Note that the faceof the surface of the second inductor wiring line 135 on the firstinductor wiring line 130 side is in contact with the first insulationlayer 180, and the face of the surface of the second inductor wiringline 135 on the fourth magnetic layer 124 side is in contact with thesecond insulation layer 185.

In the fifth layer L15, the portion excluding the first columnar wiringline 194, the second columnar wiring line 195, the third columnar wiringline 196, and the fourth insulation portion 184 is the fifth magneticlayer 125. The material of the fifth magnetic layer 125 is the same asthat of the first magnetic layer 121 described above and is a magneticmaterial.

A sixth layer L16 having the substantially rectangular shape same as thefifth layer L15 when viewed in the up-down direction is laminated on theupper face of the fifth layer L15. The sixth layer L16 is constituted ofa sixth magnetic layer 126, a fourth columnar wiring line 197, a fifthcolumnar wiring line 198, and a sixth columnar wiring line 199.

The fourth columnar wiring line 197 is disposed on the upper side of thesecond connection wiring line 147 in the fourth layer L14, and isconnected to the second connection wiring line 147 through the secondcolumnar wiring line 195. The sixth columnar wiring line 199 is disposedon the upper side of the third pad 137 of the fourth layer L14, and isconnected to the third pad 137 through the first columnar wiring line194. The fourth columnar wiring line 197 and the sixth columnar wiringline 199 have a substantially prismatic shape, and the axial directionthereof coincides with the lamination direction. The length of thefourth columnar wiring line 197 and the sixth columnar wiring line 199in the lamination direction is identical with the thickness of the sixthlayer L16 in the lamination direction. Thus, the fourth columnar wiringline 197 and the sixth columnar wiring line 199 penetrate through thesixth layer L16 in the lamination direction. That is, the first columnarwiring line 194 and the sixth columnar wiring line 199 constitute afirst vertical wiring line in the embodiment. Further, the secondcolumnar wiring line 195 and the fourth columnar wiring line 197constitute a third vertical wiring line.

In addition, the fifth columnar wiring line 198 is disposed on the upperside of the fourth pad 138 of the second inductor wiring line 135 in thefourth layer L14, and is connected to the fourth pad 138 through thethird columnar wiring line 196. That is, the third columnar wiring line196 and the fifth columnar wiring line 198 constitute a second verticalwiring line in the embodiment. Note that the fourth columnar wiring line197, the fifth columnar wiring line 198, and the sixth columnar wiringline 199 are illustrated by a dashed-and-double-dotted line in FIG. 22.

In the sixth layer L16, the portion excluding the fourth columnar wiringline 197, the fifth columnar wiring line 198, and the sixth columnarwiring line 199 is the sixth magnetic layer 126 as illustrated in FIG.21. Thus, the sixth magnetic layer 126 is laminated on the upper side ofthe second inductor wiring line 135. The material of the sixth magneticlayer 126 is the same as that of the first magnetic layer 121 describedabove and is a magnetic material.

The outer electrode 230 is laminated on the upper side face of the fifthcolumnar wiring line 198 as illustrated in FIG. 23. Further, the outerelectrode 230 is connected to the upper side face of the fourth columnarwiring line 197 and the sixth columnar wiring line 199. Note that theouter electrode 230 is not illustrated in FIG. 21.

Next, a manufacturing method of the inductor component 110 in the secondembodiment will be described.

As illustrated in FIG. 25, the manufacturing method of the inductorcomponent 110 includes a first magnetic layer processing step, a firstcovering step, a first wiring line layer processing step, a first resistlayer removing step, a second covering step, a second wiring line layerprocessing step, a second resist layer removing step, and a firstinsulation layer processing step, and the first inductor wiring line 130is formed through the steps described above. Further, the manufacturingmethod of the inductor component 110 includes a third wiring line layerprocessing step, a third covering step, a fourth wiring line layerprocessing step, a fourth covering step, a vertical wiring lineprocessing step, a fourth resist layer removing step, a third resistlayer removing step, a second insulation layer processing step, a secondmagnetic layer processing step, a base substrate removing step, an outerelectrode processing step, and a dividing step, and the second inductorwiring line 135 and the like are formed through the steps describedabove.

In manufacturing the inductor component 110, first, the first magneticlayer processing step is performed. A base substrate with a copper foil210 is prepared as illustrated in FIG. 26. A base substrate 211 of thebase substrate with the copper foil 210 has a plate-shape. A copper foil212 is laminated on the upper side face of the base substrate 211 in thelamination direction. Then, the first magnetic layer 121 composed of thebase material 120A and the magnetic metal powder 120B is formed on theupper side face of the copper foil 212 of the base substrate with copperfoil 210 as illustrated in FIG. 27. In forming the first magnetic layer121, an insulation resin containing the magnetic metal powder 120B isapplied, and the insulation resin is solidified by press working toobtain the base material 120A. Then, the upper portions of the basematerial 120A and the magnetic metal powder 120B are ground such thatthe thickness in the up-down direction of the first magnetic layer 121becomes a desired thickness. When the grinding is performed, it ispreferable to form a slight gap at the interface between the basematerial 120A and the magnetic metal powder 120B by controlling processparameters during grinding.

The first covering step is performed next to the second magnetic layerprocessing step. In the first covering step, on the upper side face ofthe first magnetic layer 121, the first resist layer 221 covering theportion on which the first wiring line layer 130B is not formed ispatterned as illustrated in FIG. 28. Specifically, first, thephotosensitive dry film resist is applied to the entire upper side faceof the first magnetic layer 121. Next, on the upper side face of thefirst magnetic layer 121, the portion on which the first wiring linelayer 130B is not formed is exposed to light. As a result, on theapplied dry film resist, the portion exposed to light is cured.Thereafter, the uncured portion of the applied dry film resist isremoved by a chemical solution. Thus, on the applied dry film resist,the cured portion is formed as the first resist layer 221. On the otherhand, the first magnetic layer 121 is exposed in the portion where theapplied dry film resist is removed by a chemical solution and is notcovered by the first resist layer 221.

The first wiring line layer processing step is performed next to thefirst covering step. In the first wiring line layer processing step, thefirst wiring line layer 130B is formed on the upper side face of thefirst magnetic layer 121 as illustrated in FIG. 29. Specifically, theelectroless copper plating by performing immersion in the electrolesscopper plating solution forms the first wiring line layer 130B having acopper ratio equal to or less than about 99 wt % and a nickel ratioequal to or larger than about 0.1 wt % on the upper side face of thefirst magnetic layer 121 exposed from the first resist layer 221. Theelectroless copper plating solution is an alkaline solution, andcontains copper salts such as copper chloride, copper sulfate and thelike. On the other hand, the material of the magnetic metal powder 120Bis iron, and the ionization tendency is larger than that of copper beingthe material of the first wiring line layer 130B. Therefore, in thefirst wiring line layer processing step, iron on the surface of themagnetic metal powder 120B dissolves, and instead, copper is depositedon the surface of the magnetic metal powder 120B.

Here, since the electroless copper plating solution enters a slight gapbetween the base material 120A and the magnetic metal powder 120B, thesubstitution of iron with copper occurs not only on the exposed faceside of the magnetic metal powder 120B but also on the surface of themagnetic metal powder 120B on the inner side of the base material 120A.Then, copper deposited on the surface of the magnetic metal powder 120Bon the inner side of the base material 120A functions as the anchorportion 134. Thus, the anchor portion 134 extending from the lower sideface of the first wiring line layer 130B is formed with electrolesscopper plating.

The first resist layer removing step for removing the first resist layer221 is performed next to the first wiring line processing step. In thefirst resist layer removing step, the first resist layer 221 is peeledoff to remove from the first magnetic layer 121 as illustrated in FIG.30.

The second covering step is performed next to the first resist layerremoving step. In the second covering step, on the upper side face ofthe first magnetic layer 121, the second resist layer 222 covering theportion on which the second wiring line layer 130C is not formed ispatterned as illustrated in FIG. 31. The second resist layer 222 ispatterned such that an area slightly wider than the first wiring linelayer 130B is exposed in the embodiment. Note that the aspect of thephotolithography in the second covering step is the same as that in thefirst covering step and a detailed description thereof will be omitted.

The second wiring line layer processing step is performed next to thesecond covering step. In the second wiring line layer processing step,the second wiring line layer 130C is formed in the portion not coveredby the second resist layer 222. Specifically, electrolytic copperplating is performed, and the second wiring line layer 130C having acopper ratio equal to or larger than about 99 wt % is formed on thesurface not covered by the second resist layer 222. At this time, theend portion of the second wiring line layer 130C is in direct closecontact with the first magnetic layer 121 not covered by the firstwiring line layer 130B as illustrated in FIG. 24. Therefore, the platingsolution for the electrolytic copper plating enters the gap between thebase material 120A and the magnetic metal powder 120B in the firstmagnetic layer 121 being in contact with the lower side face of thesecond wiring line layer 130C. Copper precipitating from the platingsolution and caught in the gap functions as the anchor portion 134. Thefirst wiring line processing step and the second wiring line processingstep described above are the inductor wiring line processing steps inthe embodiment.

The second resist layer removing step is performed next to the secondwiring line layer processing step. In the second resist layer removingstep, the second resist layer 222 is peeled off to remove from the firstmagnetic layer 121 as illustrated in FIG. 32.

The first insulation layer processing step is performed next to thesecond resist layer removing step. The first inductor wiring line 130 iscovered by an insulation material from the upper side in the laminationdirection as illustrated in FIG. 33. With this, the first insulationlayer including the first insulation portion 181 and the secondinsulation portion 182 is formed on the entire upper side face of thefirst magnetic layer 121 and the first inductor wiring line 130.

The third wiring line processing step is performed next to the firstinsulation layer processing step. First, on the upper side face of thefirst inductor wiring line 130, a hole penetrating through the secondinsulation portion 182 is formed by laser at the portion on which thethird via 193 is formed as illustrated in FIG. 34. With this, the upperside face of the first inductor wiring line 130 is exposed at theportion on which the third via 193 is formed. Next, the third wiringline layer 200A functioning as a seed layer is formed by sputtering fromthe upper side in the lamination direction. The material of the thirdwiring line layer 200A contains titanium and chromium.

The third covering step is performed next to the third wiring lineprocessing step. In the third covering step, on the surface of the thirdwiring line layer 200A, the third resist layer 223 covering the portionon which the fourth wiring line layer 200B is not formed is patterned.Note that the aspect of the photolithography in the third covering stepis the same as that in the first covering step and a detaileddescription thereof will be omitted.

The fourth wiring line layer processing step is performed next to thethird covering step. In the fourth wiring line layer processing step,the electrolytic copper plating is performed, and on the surface of thethird wiring line layer 200A, the fourth wiring line layer 200B having acopper ratio equal to or larger than about 99 wt % is formed on theportion not covered by the third resist layer 223.

The fourth covering step is performed next to the fourth wiring lineprocessing step. In the fourth covering step, the fourth resist layer224 covering the portion in which the vertical wiring line is not formedis patterned as illustrated in FIG. 35. That is, although notillustrated in the drawings, only the portions forming the firstcolumnar wiring line 194, the second columnar wiring line 195, the thirdcolumnar wiring line 196, the fourth columnar wiring line 197, the fifthcolumnar wiring line 198, and the sixth columnar wiring line 199 areexposed from the fourth resist layer 224.

The vertical wiring line processing step is performed next to the fourthcovering step. In the vertical wiring line processing step, theelectrolytic copper plating is performed, and on the surface of thesecond wiring line layer 130C, each vertical wiring line of a copperratio equal to or larger than about 99 wt % is formed on the portion notcovered by the fourth resist layer 224. That is, the third columnarwiring line 196 and the fifth columnar wiring line 198 are formed.Although not illustrated in the drawings, the first columnar wiring line194, the second columnar wiring line 195, the fourth columnar wiringline 197, and the sixth columnar wiring line 199 are also formed.

The fourth resist layer removing step and the third resist layerremoving step are performed at the same time next to the vertical wiringline processing step. Specifically, the third resist layer 223 and thefourth resist layer 224 are peeled off to remove from the first magneticlayer 121 as illustrated in FIG. 36. Then, the third wiring line layer200A functioning as a seed layer exposed to the surface is removed byetching.

The second insulation layer processing step is performed next to thethird resist layer removing step. In the second insulation layerprocessing step, an insulation resin is applied to the upper side faceas illustrated in FIG. 37. Specifically, first, the insulation resin isapplied from the upper side in the lamination direction to an extent inwhich the fourth wiring line layer 200B is entirely covered. Next, theportion for forming the fourth insulation portion 184 is exposed tolight. Thereafter, the uncured portion of the applied insulation resinis peeled and removed by a chemical solution. As a result, the portionof the applied insulation resin exposed to light is cured, and the thirdinsulation portion 183 and the fourth insulation portion 184 are formedas illustrated in FIG. 38. Thereafter, in the first insulation layerincluding the first insulation portion 181 and the second insulationportion 182, the portion in which the first insulation portion 181 andthe second insulation portion 182 are not formed, is removed by laser asillustrated in FIG. 39.

The second magnetic layer processing step is performed next to thesecond insulation layer processing step. In the second magnetic layerprocessing step, a magnetic material is filled to the upper side in thelamination direction relative to the upper end of the fifth columnarwiring line 198 as illustrated in FIG. 40. Next, the grinding from theupper side in the lamination direction is performed until upper ends ofthe respective vertical wiring lines are exposed. With this, the secondmagnetic layer 122, the third magnetic layer 123, the fourth magneticlayer 124, the fifth magnetic layer 125, and the sixth magnetic layer126 are formed.

The base substrate removing step is performed next to the secondmagnetic layer processing step. In the base substrate removing step, thebase substrate with the copper foil 210 is removed as illustrated inFIG. 41. Specifically, the base substrate 211 is peeled off to removefrom the first magnetic layer 121. Next, the copper foil is removed byetching. Then, the first magnetic layer 121 is ground from the lowerside in the lamination direction until the thickness from the lower endof the first magnetic layer 121 toward the upper end of the sixthmagnetic layer 126 reaches a desired value.

The outer electrode processing step is performed next to the basesubstrate removing step. Specifically, the outer electrode is formed onthe upper side faces of the respective vertical wiring lines, that is,the upper side faces of the fourth columnar wiring line 197, the fifthcolumnar wiring line 198, and the sixth columnar wiring line 199 byelectroless plating, electrolytic plating, printing, sputtering, or thelike. The outer electrode has a single-layer or a laminated structureand includes any of copper, nickel, gold, and tin.

The dividing step is performed next to the outer electrode processingstep. Specifically, the dividing is performed by cutting with a dicingmachine at break lines DL as illustrated in FIG. 42. With this, theinductor component 110 may be obtained. In addition, at this time, thefirst dummy wiring line 141 and the second dummy wiring line 142included in the break lines DL are exposed to the side face of theinductor component 110.

Next, effects of the second embodiment will be described. According tothe second embodiment, in addition to the effects of (1) to (5) and (9)to (13) of the first embodiment, the following effects are achieved.

(14) According to the inductor component 110 in the second embodiment,part of the second wiring line layer 130C extends to the layer in whichthe first wiring line layer 130B is disposed, and is interposed betweenthe first wiring line layer 130B and the second magnetic layer 122.Therefore, the contact area between the first wiring line layer 130B andthe second wiring line layer 130C is increased, and the adhesion betweenthe first wiring line layer 130B and the second wiring line layer 130Cis improved.

(15) According to the inductor component 110 in the second embodiment,the entire fourth wiring line layer 200B is laminated on the upper sideface of the third wiring line layer 200A, and is not interposed betweenthe third wiring line layer 200A and the fourth magnetic layer 124.Therefore, different resist designs are allowed to manufacture the firstinductor wiring line 130 and the second inductor wiring line 135, and itimproves the degree of freedom in design.

(16) According to the inductor component 110 in the second embodiment,the first inductor wiring line 130 and the second inductor wiring line135 are disposed in the lamination direction. That is, the inductorwiring line is not constituted as a single layer, but is constituted asa plurality of layers. Therefore, the inductance of the entire inductorcomponent 110 may be improved.

(17) According to the inductor component 110 in the second embodiment,the first insulation layer 180 contains insulation resin and aninorganic filler. Therefore, strength of the first insulation layer 180may be improved.

(18) According to the inductor component 110 in the second embodiment,the material of the first wiring line layer 130B has a copper ratioequal to or less than about 99 wt % and a nickel ratio equal to orlarger than about 0.1 wt %. Therefore, the first wiring line layer 130Bmay be manufactured by electroless plating. Further, the third wiringline layer 200A contains chromium or titanium. Therefore, the thirdwiring line layer 200A may be manufactured by sputtering. As a result,the wiring line layers disposed in different layers may be manufacturedby different manufacturing methods, which improves the degree of freedomin the manufacturing process.

Each of the embodiments may be implemented with the followingmodifications. Each of the embodiments and the following modificationscan be implemented in combination within a scope not technicallycontradicting each other.

In each of the embodiments, the inductor wiring line is capable ofimparting inductance to the inductor component by generating magneticflux in the magnetic layer when an electric current flows.

In each of the embodiments, the shape of the inductor wiring line is notlimited to the example in each embodiment. For example, the inductorwiring line may have a curved shape less than about 1.0 turn or a linearshape of 0 turns. Further, part of a plurality of inductor wiring linesmay have a shape different from that of other inductor wiring line.Furthermore, in each of the embodiments, the inductor wiring line mayhave a meander shape.

In the first embodiment, a plurality of the inductor wiring lines 30 maybe provided in the same layer. In this case, the provision of theplurality of inductor wiring lines 30 may suppress an excessive increasein the overall size in the lamination direction because the plurality ofinductor wiring lines 30 is disposed in the same layer while an overallinductance is improved. Further, the inductor component 10 in which theplurality of inductor wiring lines 30 is provided in the same layer maybe used by being divided into a plurality of inductor components.

In each of the embodiments, the wiring line structure of the inductorwiring line is not limited to the example in each embodiment. Forexample, in the inductor wiring line, the shapes of the first pad andthe second pad may be changed, or the first pad and the second pad maybe omitted.

In the first embodiment, the catalyst layer 30A and the second wiringline layer 30C may be omitted in the inductor wiring line 30, and theinductor wiring line 30 may be constituted of only the first wiring linelayer 30B. Even in this case, the lower side face of the first wiringline layer 30B constitutes the main face MF of the inductor wiring line30 and the anchor portion 34 needs to extend from the lower side face ofthe first wiring line layer 30B.

In each of the embodiments, the amount that the anchor portion covers isnot limited to the example in each embodiment. For example, the anchorportion may not cover all of the surface of the magnetic metal powder incontact with, and may cover less than about one-third of the areathereof. In this case, the magnetic metal powder covered by the anchorportion may not include a cross section in which equal to or more thanabout one-third of the surface is covered by the anchor portion when themagnetic metal powder is viewed in a cross section. Further, the anchorportion may not cover the surfaces of all the magnetic metal powders incontact with the main face of the inductor wiring line. Furthermore, theanchor portion may be omitted.

In each of the embodiments, the formation of the anchor portion and thecontrol of the amount to be covered by the anchor portion are notlimited to the example in the embodiment. For example, in the firstembodiment, an alkaline chemical solution that dissolves the basematerial 20A of the first magnetic layer 21 and does not dissolve themagnetic metal powder 20B is used at the time of surface treatment suchas removing the resin residue of the first magnetic layer 21, and theinterface state between the base material 20A and the magnetic metalpowder 20B may be controlled with the duration of the processing time.

In the first embodiment, a slight gap is formed between the basematerial 20A and the magnetic metal powder 20B when the grinding isperformed and an electroless copper plating solution is infused into thegap in the inductor wiring line processing step. However, any otherknown method may be used as long as the anchor portion 34 may be formed.In particular, even in a case where there is no clear gap at theinterface between the base material 20A and the magnetic metal powder20B, the electroless copper plating solution enters along the interfacebetween the base material 20A and the magnetic metal powder 20B, and thesubstitution of iron with copper described above is generated.Therefore, a gap between the base material 20A and the magnetic metalpowder 20B need not be formed at the time of the grinding.

In the first embodiment, the catalyst layer 30A and the second wiringline layer 30C may be omitted in the inductor wiring line 30, and theinductor wiring line 30 may be constituted of only the first wiring linelayer 30B.

In each of the embodiments, the material of the first wiring line layeris not limited to the example in each embodiment. For example, thematerial of the first wiring line layer may have a nickel ratio equal toor less than about 99 wt % and a phosphorus ratio equal to or largerthan about 0.5 wt % and equal to or less than about 10 wt % (i.e., fromabout 0.5 wt % to about 10 wt %). In this case, containing phosphorusallows the control of the stress existing in nickel, and the residualstress in the inductor component may be mitigated. Further, containingnickel in the first wiring line layer may suppress electromigration.

In each of the embodiments, the material of the second wiring line layermay be a metal other than copper. Note that the boundary face betweenthe second wiring line layer and the first wiring line layer is notnecessarily clear, and in some cases, a clear interface between thefirst wiring line layer and the second wiring line layer may not beobserved.

In each of the embodiments, the thickness of the second wiring linelayer may be less than about five times the thickness of the firstwiring line layer.

In the first embodiment, the material of the catalyst layer 30A is notlimited to the example in the embodiment. The material of the catalystlayer 30A needs to include at least one or more metals among palladium,platinum, silver, and gold.

In the first embodiment, the thickness TA of the inductor wiring line 30is not limited to the example in the embodiment. When the thickness TAof the inductor wiring line 30 is equal to or larger than about 40 μm,the DC resistance may be made relatively small. When the thickness TA ofthe inductor wiring line 30 is equal to or less than about 120 μm, thewiring line width with respect to the thickness TA may not excessivelybe increased.

In the first embodiment, the thickness TB of the first wiring line layer30B is not limited to the example in the embodiment. When the thicknessTB of the first wiring line layer 30B is equal to or larger than about0.3 μm and equal to or less than about 10 μm (i.e., from about 0.3 μm toabout 10 μm), the first wiring line layer 30B may easily be formed byelectroless copper plating.

In each of the embodiments, the material of the insulation layer is notlimited to the example in each embodiment. For example, when thematerial of the insulation layer contains at least one resin amongepoxy-based resin, phenol-based resin, acrylic-based resin,polyimide-based resin, and liquid crystal polymer-based resin, and aninorganic filler having an average particle size equal to or less thanabout 1 μm, it is suitable for ensuring the strength of the magneticlayer. Further, the material of the insulation layer is not limited tothe above-description, and may be only a resin with an insulationproperty.

In each of the embodiments, the area in which the insulation layercovers the inductor wiring line is not limited to the example in eachembodiment. It is sufficient that at least the face of the surface ofthe inductor wiring line on the first magnetic layer side is not coveredby the insulation layer and in contact with the first magnetic layer,and the face of the surface of the inductor wiring line on the secondmagnetic layer side is covered by the insulation layer. For example, inthe first embodiment, all the face of the inductor wiring line 30 on thesecond magnetic layer 22 side may be covered by the insulation layer 80.Further, all of the face of the inductor wiring line 30 on the thirdmagnetic layer 23 side may be covered by the insulation layer 80.Furthermore, the face of the inductor wiring line 30 on the thirdmagnetic layer 23 side may not be covered by the insulation layer 80.Still further, when part of the face of the inductor wiring line 30 onthe second magnetic layer 22 side is covered by the insulation layer 80,the insulation layer 80 may not be interposed at the portion where thedistance between the wiring lines in the inductor wiring line 30 isminimum.

In the second embodiment, the materials of the first inductor wiringline 130 and the second inductor wiring line 135 may be the same witheach other.

In the second embodiment, the fourth wiring line layer 200B in thesecond inductor wiring line 135 may not extend to the layer in which thethird wiring line layer 200A is disposed, and may not be interposedbetween the third wiring line layer 200A and the fifth magnetic layer125.

In the manufacturing method in each of the embodiments, the dividingstep may be omitted. In this case, for example, when the inductorcomponent is manufactured in the size of one component from the firstmagnetic layer processing step, the dividing step may be omitted.

In the embodiments, the boundaries of the magnetic layers in therespective layers may be integrated such that the interfaces cannot beconfirmed, or may be separate bodies in which the interfaces can beconfirmed.

While preferred embodiments of the disclosure have been described above,it is to be understood that variations and modifications will beapparent to those skilled in the art without departing from the scopeand spirit of the disclosure. The scope of the disclosure, therefore, isto be determined solely by the following claims.

What is claimed is:
 1. An inductor component, comprising: a firstmagnetic layer; an inductor wiring line laminated on a main face of thefirst magnetic layer; a second magnetic layer disposed in a layer sameas the inductor wiring line; a third magnetic layer disposed on a mainface of the inductor wiring line and the second magnetic layer on a sideopposite to the first magnetic layer; and an insulation layer being anon-magnetic material in contact with part of a surface of the inductorwiring line, wherein, an entire face of the surface of the inductorwiring line on a side of the first magnetic layer is in contact with thefirst magnetic layer, and a face of the surface of the inductor wiringline on a side of the second magnetic layer is in contact with theinsulation layer.
 2. The inductor component according to claim 1,wherein a face of the surface of the inductor wiring line on a side ofthe third magnetic layer is in contact with the insulation layer.
 3. Theinductor component according to claim 1, wherein part of the surface ofthe inductor wiring line is exposed from the insulation layer and is incontact with the second magnetic layer.
 4. The inductor componentaccording to claim 1, wherein the inductor wiring line is wound morethan 1.0 turns in the layer in which the inductor wiring line isdisposed.
 5. The inductor component according to claim 4, wherein theinsulation layer is interposed in a portion where a distance betweenwiring lines in the inductor wiring line is minimum in the layer inwhich the inductor wiring line is disposed.
 6. The inductor componentaccording to claim 1, further comprising: a vertical wiring line beingconnected to the inductor wiring line and penetrating through the thirdmagnetic layer from a main face on a side of the inductor wiring linetoward a main face on a side opposite to a side of the inductor wiringline, wherein a face of a surface of the vertical wiring line on a sideof the third magnetic layer is in contact with the insulation layer. 7.The inductor component according to claim 1, wherein the insulationlayer includes at least one resin among epoxy-based resin, phenol- basedresin, acrylic-based resin, polyimide-based resin, or liquid crystalpolymer-based resin.
 8. The inductor component according to claim 1,wherein the insulation layer contains an inorganic filler having anaverage particle size equal to or less than 1.0 μm.
 9. The inductorcomponent according to claim 1, wherein the inductor wiring line has alaminated structure including a first wiring line layer on a side of thefirst magnetic layer and a second wiring line layer laminated on asurface of the first wiring line layer on a side of the third magneticlayer, and part of the second wiring line layer extends to an inside ofa layer in which the first wiring line layer is disposed, and isinterpose between the first wiring line layer and the second magneticlayer.
 10. The inductor component according to claim 9, wherein theinductor wiring line includes a catalyst layer containing at least oneor more metals among palladium, platinum, silver, or gold, and thecatalyst layer is disposed on the first wiring line layer on a side ofthe first magnetic layer.
 11. The inductor component according to claim9, wherein a material of the first wiring line layer has a copper ratioequal to or less than 99 wt %, and a nickel ratio equal to or largerthan 0.1 wt %.
 12. The inductor component according to claim 9, whereina material of the first wiring line layer has a nickel ratio equal to orless than 99 wt %, and a phosphorus ratio from 0.5 wt % to 10 wt %. 13.The inductor component according to claim 9, wherein the inductor wiringline has a thickness from 40 μm to 120 μm, and the first wiring linelayer has a thickness from 0.3 μm to 10 μm.
 14. The inductor componentaccording to claim 1, further comprising: a vertical wiring line beingconnected to the inductor wiring line and penetrating through the thirdmagnetic layer from a main face on a side of the inductor wiring linetoward a main face on a side opposite to a side of the inductor wiringline, wherein a covering layer formed of an insulation material islaminated on the main face of the third magnetic layer on a sideopposite to the inductor wiring line, a face of the vertical wiring lineon a side opposite to the inductor wiring line is not covered by thecovering layer, and an outer electrode is connected to a portion in thevertical wiring line being exposed from the covering layer.
 15. Theinductor component according to claim 1, wherein when the inductorwiring line is denoted as a first inductor wiring line and theinsulation layer is denoted as a first insulation layer, the inductorcomponent further comprises: a second inductor wiring line disposed on amain face of the third magnetic layer on a side opposite to the firstinductor wiring line; a fourth magnetic layer disposed in a layer sameas the second inductor wiring line; a fifth magnetic layer disposed onthe second inductor wiring line and the fourth magnetic layer on a sideopposite to the first inductor wiring line; and a second insulationlayer being a non-magnetic material in contact with part of a surface ofthe second inductor wiring line, wherein a face of the first inductorwiring line on a side of the third magnetic layer is in contact with thefirst insulation layer, a face of a surface of the second inductorwiring line on a side of the first inductor wiring line is in contactwith the first insulation layer, and a face of the surface of the secondinductor wiring line on a side of the fourth magnetic layer is incontact with the second insulation layer.
 16. The inductor componentaccording to claim 15, wherein part of the surface of the secondinductor wiring line is exposed from the second insulation layer and isin contact with the fourth magnetic layer.
 17. The inductor componentaccording to claim 15, wherein the first insulation layer contains aninorganic filler, and the second insulation layer does not contain theinorganic filler.
 18. The inductor component according to claim 17,wherein the first inductor wiring line has a laminated structureincluding a first wiring line layer and a second wiring line layerlaminated on a surface of the first wiring line layer on a side oppositeto the first magnetic layer, the second inductor wiring line has alaminated structure including a third wiring line layer and a fourthwiring line layer laminated on a surface of the third wiring line layeron a side opposite to the third magnetic layer, a material of the firstwiring line layer has a copper ratio equal to or less than 99 wt %, anda nickel ratio equal to or larger than 0.1 wt %, and a material of thethird wiring line layer includes at least one of chromium or titanium.19. The inductor component according to claim 17, wherein the firstinductor wiring line has a laminated structure including a first wiringline layer and a second wiring line layer laminated on a surface of thefirst wiring line layer on a side opposite to the first magnetic layer,the second inductor wiring line has a laminated structure including athird wiring line layer and a fourth wiring line layer laminated on asurface of the third wiring line layer on a side opposite to the thirdmagnetic layer, part of the second wiring line layer extends to aninside of a layer in which the first wiring line layer is disposed, andis interposed between the first wiring line layer and the secondmagnetic layer, and the fourth wiring line layer is entirely laminatedon a surface of the third wiring line layer on a side opposite to thethird magnetic layer.
 20. The inductor component according to claim 2,wherein part of the surface of the inductor wiring line is exposed fromthe insulation layer and is in contact with the second magnetic layer.